Using atomistic simulations to model cadmium telluride thin film growth
نویسندگان
چکیده
منابع مشابه
Using atomistic simulations to model cadmium telluride thin film growth.
Cadmium telluride (CdTe) is an excellent material for low-cost, high efficiency thin film solar cells. It is important to conduct research on how defects are formed during the growth process, since defects lower the efficiency of solar cells. In this work we use computer simulation to predict the growth of a sputter deposited CdTe thin film. On-the-fly kinetic Monte Carlo technique is used to s...
متن کاملPolycrystalline Thin-Film Cadmium Telluride Solar Cells Fabriacted by Electrodeposition
This publication was reproduced from the best available copy Submitted by the subcontractor and received no editorial review at NREL NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liab...
متن کاملGrowth modification of seeded calcite using carboxylic acids: atomistic simulations.
Molecular dynamics simulations were used to investigate possible explanations for experimentally observed differences in the growth modification of calcite particles by two organic additives, polyacrylic acid (PAA) and polyaspartic acid (p-ASP). The more rigid backbone of p-ASP was found to inhibit the formation of stable complexes with counter-ions in solution, resulting in a higher availabili...
متن کاملPolycrystalline Thin Film Cadmium Telluride Solar Cells Fabricated by Electrodeposition; Annual Technical Report, 20 March 1995 -- 19 March 1996
متن کامل
Atomistic surface erosion and thin film growth modelled over realistic time scales.
We present results of atomistic modelling of surface growth and sputtering using a multi-time scale molecular dynamics-on-the-fly kinetic Monte Carlo scheme which allows simulations to be carried out over realistic experimental times. The method uses molecular dynamics to model the fast processes and then calculates the diffusion barriers for the slow processes on-the-fly, without any preconcep...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Condensed Matter
سال: 2016
ISSN: 0953-8984,1361-648X
DOI: 10.1088/0953-8984/28/10/105002